These industries use it to multiply their profits several times over! Laser marking machine in the consumer electronics industry applications

  • Categories:Industry News
  • Author:HUYUN Optoelectronic Equipment Co., Ltd.
  • Time of issue:2023-10-16
  • Readers:636

Application in Consumer Electronics Industry: Computer is an important electronic device in every family, it is an essential electronic device in people's life and work, used to collect information, documents, send and receive e-mails, edit documents and so on. Therefore, computer mouse and keyboard markings have long been used for a long time without displaying letters or numbers.

These industries use it to multiply their profits several times over!

laser marking machine

Application in Consumer Electronics Industry: Computer is an important electronic device in every family, it is an essential electronic device in people&qu39;s life and work, used to collect information, documents, send and receive e-mails, edit documents and so on. Therefore, computer mouse and keyboard markings have long been used for a long time without displaying letters or numbers. Prolonged exposure can lead to fading. Now there will be laser marking function of the logo. The laser marking machine uses laser output signals to realize the marking function through a high-speed scanning galvanometer system.

Laser marking machine light conversion efficiency, air-cooled, small size, good light efficiency, high reliability. Laser marking technology is different from traditional screen printing and thermal transfer printing: the text or pattern produced by laser marking can identify gender. Engraving unique customized patterns, the pattern can be any graphic elements, such as flowers, landscapes, humanistic landscapes and so on.

Laser marking is a personal method of laser engraving, referred to as TIME. using advanced laser marking technology to engrave individual patterns, and use the mouse built-in far light LEDs to show the effect of color pattern changes. The core of the laser marking machine is a creative combination of culture, technology and personal consumption of the three elements, with high-tech equipment, a little bit of the mouse to show the profound Chinese culture and the common culture of the European and American world. And keyboard.

Mouse and keyboard is not only a product, but also a cultural artifact that can express consumers&qu39; personal feelings. Unique interests and tastes are better able to meet the growing needs of individual consumer groups. Therefore, the mouse, keyboard and other product marking should use good high-power laser marking to enhance consumer experience.

UV laser marking refers to a laser marking process. The principle is to use the laser beam to focus the surface of various marking materials. Thin, can realize very fine marking, heat range is very small, the thermal effect is relatively small, and there is no material combustion problem, its advantages, can be applied to a wider range of materials.

Advantages of UV laser marking

Compared with infrared lasers, UV lasers use third-order intracavity frequency doubling technology in the 355nm range. The focus of the laser beam is very small during UV laser marking and the thermal exposure during processing can be very small. It reduces the risk of deformation of the marking material and is ideal for finishing purposes. It is mainly used for fine food labeling, pharmaceutical packaging labeling, circuit board labeling, glass material labeling and other applications.

Most laser applications on the market use infrared laser generators such as carbon dioxide, fiber, semiconductor and wafer, but also green and ultraviolet light. Of these, infrared laser therapy technology is currently the most mature. This type of laser therapy is widely used in industry, but the potential market for green and UV lasers is also very large. This has not yet been fully realized, especially with regard to the technological and market development potential of UV lasers.

UV laser marking is commonly used for fine marking of special materials and is the first choice for customers with high marking power requirements. The high-energy UV photon molecules of the UV laser process act directly on the surface of the object being treated, rapidly removing the molecules from the metallic or non-metallic material. Heat generation in this mode of operation is very low, which also differs from conventional laser applications.

UV laser marking works better on product materials because they have clear patterns and fine texture. The use of UV laser treatment reduces the chances of the material being mechanically affected by 1%, reducing the quality of the work, the stability of the quality and the processability. It is best to emphasize the benefits of good care. I believe that UV lasers will mark the future of the laser market for other technological innovations and industrial applications.

H-MOE-induced self-aligned LIPS with large-area nanostructures

The sequential generation of LIPS takes into account four types of laser scanning conditions and their combinations: parallel to polarization when the scanning direction is parallel to the polarization, perpendicular to the polarization when the scanning direction is perpendicular to the polarization, and each time the parallels are ablated, we always have the paths scanned in the same volume and in the same direction (the default direction is left to right), and both forward and backward scanning paths are ablated by the ablation of the parallels to be performed.

During parallel scanning with Gaussian polarization of a femtosecond laser, localized LIPSS perturbations occur, including offsets, directional bending and hinging, as well as sequential skewing that decreases with the scanning interval.

When the distance d between neighboring scan lines is large enough to exceed the effective distance that leads to the h-MOE phenomenon (4.5 µm under experimental conditions), there is no interaction between the LIPS of these two lines. As d decreases, the shift of the adaptive half-period occurs locally in the vicinity of the LIPS peak due to the redistribution of the SPP caused by the h-MOE phenomenon.

In large-area production LIPSS, the smoothness of LIPSS over long distances depends strongly on the laser scan path. In general, for most metals and semiconductor materials, LIPSS are polarized perpendicular to the laser in a single scan because the energy release follows the distribution of the SPP, which is usually perpendicular to the polarization of the incident laser that excites the SPP. However, the H-MOE phenomenon usually leads to stable, self-aligned, incompatible, and tilted gratings in subsequent scans in parallel right-tilted scans d. These very uniformly tilted grids are important experimental results.

The process of LPSS growth using polarized parallel sampling can be divided into four stages.

(1) Creation of networked LIPS: Starting from the first LIPS, a stable and homogeneous LIPS is developed without significant periodicity, which gradually adapts after the first pulse due to the gradual strengthening of the network connections. The depth of the LIPS is gradually increased with the release of ablation energy to better satisfy the phase adaptation of the lattice coupling effect. Experimental data and simulated cross sections for SPP optimization with lattice bonding are provided.

(2) LIPSS Directional: Self-alignment due to the h-MOE phenomenon leads to a directional link between two asynchronous LIPSS in two neighboring scan lines despite initial localized disturbances, including branching. When irradiated with a laser beam having a Gaussian intensity distribution scanned sequentially from left to right and the actual pulses overlap, LIPSs are generated in the direction of the incompatible waves, resulting in oriented LIPSs. this link provides a self-directed extension of the LPSS.

(3) Lip self-alignment: Curved lips gradually straighten and tilt. The durability provided by the nonlinear optical properties of the SPP contributes to this self-alignment property. In particular, the redistributed electric field can be considered as a superposition of parasitic fields from all scattering centers, where the near-field scattering is strongly interfered by local disturbances. Outside the progression centers, however, the SPP tuning stability exhibits a smoother wavefront than the progression center perturbations, which would help to match the energy supply generated by the LIPS. At the same time, the h-MOE phenomenon due to SPP disturbances is also resistant to small disturbances in LIPSS.

(4) LIPSS self-consistent growth: Since the phase-matched shape of the gate-switching effect is always populated, the LIPSS can be scaled up by the existing ripple induced by SPP optimization and facilitated by branchless network connections.

It should be emphasized that the growth of uniform, self-aligned and angled lips in the four phases described above is theoretically not limited to the treatment area, the incident laser (various illumination conditions including laser beam, wavelength and power) and the irradiated material. In addition, it can be seen that the inclination angle θ decreases with decreasing d and with different rates of descent for different materials.

3. Simultaneous mechanisms for TOE and MOE

In parallel-polarized scans, where the distance d between scans is relatively small, the tilted LIPS differs from the previous ratio because the LIPS is perpendicular to the laser polarization, whereas the perpendicular-polarized counterpart makes the LIPS perpendicular to the laser polarization. laser polarization. To explain this phenomenon, a competing mechanism between TOE and MOE was proposed and further experiments were conducted by changing the angle between polarization and scanning direction. TOE is a near-field optical enhancement at the tip of the nano-groove, leading to ablation to always extend the nano-groove perpendicular to the laser polarization. However, effective ablation with a sufficiently strong tip can only be achieved when the groove width is small enough.